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US 2015/0318408 A1Published application
Edge Illuminated Photodiodes
AssigneeOSI Optoelectronics, Inc.
InventorsPeter Steven Bui, Narayan Dass Taneja, Manoocher Mansouri
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Abstract
This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.
Claims19
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An edge illuminated photodiode comprising:
- a substrate with at least a plurality of sides, wherein said plurality of sides comprise a first side having a region doped with an impurity of a first conductivity type and a second side having a region doped with an impurity of a second conductivity side;
- an anode metallization layer;
- and
- a cathode metallization layer.
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An edge illuminated photodiode comprising:
- a substrate with at least a plurality of sides, wherein said plurality of sides comprise a first side having a region doped with an impurity of a first conductivity type, a second side having a region doped with an impurity of a second conductivity side, and a third side wherein an inner face of said third side forms an angle greater than 90 degrees with at least one other side of the substrate;
- an anode metallization layer and
- a cathode metallization layer.
A photodiode comprising:
- a substrate with at least a plurality of sides, wherein said plurality of sides comprise a first side having a region doped with an impurity of a first conductivity type and a second side adjacent to said first side and comprising a region doped with an impurity of a second conductivity side;
- an anode metallization layer;
- and
- a cathode metallization layer, wherein at least one side of said substrate is subject to texturization.
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Dependencies are inferred from the claim text.