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US 2015/0318406 A1Published application
Continuous tunable lc resonator using a fet as a varactor
AssigneeSkyworks Solutions, Inc.
InventorsBin Li, Peter J. Zampardi, JR., Andre G. Metzger
Life of this patent
Estimating the term…
Abstract
A varactor includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage applied to the back gate of the FET creates a continuously variable capacitance in a channel of the FET.
Claims21
(canceled)
An apparatus, comprising:
- a bipolar junction transistor (BJT);
- and
- a field effect transistor (FET) integrated with at least a portion of the BJT and including a back gate which shares an electrical connection with a base of the BJT, a reverse voltage being applied to the back gate of the FET.
A radio-frequency (RF) module comprising:
- a packaging substrate configured to receive a plurality of components;
- a die mounted on the packaging substrate, the die including a circuit that includes a bipolar junction transistor (BJT) and a field effect transistor (FET) integrated with at least a portion of the BJT, the FET including a back gate which shares an electrical connection with a base of the BJT, a reverse voltage being applied to the back gate of the FET;
- and
- a plurality of connectors configured to provide electrical connections between the die and the packaging substrate.
1 more element
A radio-frequency (RF) device comprising:
- a transmitter configured to generate an RF signal;
- an antenna in communication with the transmitter to facilitate transmission of the RF signal;
- and
- an RF module disposed between the transmitter and the antenna and configured to process the RF signal, the RF module having a circuit that includes a bipolar junction transistor (BJT) and a field effect transistor (FET) integrated with at least a portion of the BJT, the FET including a back gate which shares an electrical connection with a base of the BJT, a reverse voltage being applied to the back gate of the FET.
1 more element
A method, comprising:
- applying a reverse voltage to a back gate of a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), the back gate of the FET sharing an electrical connection with the a of the BJT.
Dependencies are inferred from the claim text.