Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor
AssigneeCanon Kabushiki Kaisha
InventorsRyo Hayashi, Masafumi Sano, Katsumi Abe, Hideya Kumomi, Kojiro Nishi
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Abstract
A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.
Claims19
1-20. (canceled)
An article with a field-effect transistor comprising:
- a substrate;
- a field-effect transistor disposed on the substrate,
- wherein the field-effect transistor comprises an active layer which contains an oxide containing at least one selected from the group consisting of In—Ga—Zn oxide, Sn—In—Zn oxide, In oxide, In—Sn oxide, In—Ga oxide, and In—Zn oxide;
- and
- a light-shielding member formed so as to shield the active layer from light which enters the active layer,
- wherein the light-shielding member has a light-shielding property to light having any wavelength in a range of 400 to 500 nm and has a transmittance of 30% or less in any wavelength in a range of 400 to 500 nm.
A field-effect transistor comprising a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer,
- wherein the active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm,
- wherein a light-shielding member is formed so as to shield the active layer from light which enters the active layer,
- wherein the oxide satisfies the following conditions:
- (a) the oxide contains at least one selected from the group consisting of In—Ga—Zn oxide, Sn—In—Zn oxide, In oxide, In—Sn oxide, In—Ga oxide, and In—Zn oxide;
- (b) an electron carrier concentration is lower than 1018/cm3, and
- wherein the light-shielding member has a light-shielding property to light having any wavelength in a range of 400 to 500 nm;
- and
- (c) the light-shielding member has a transmittance of 30% or less in any wavelength in a range of 400 to 500 nm.
Dependencies are inferred from the claim text.