US 2015/0318404 A1Published application

Semiconductor device

AssigneeJapan Display Inc.

InventorsToshimasa ISHIGAKI, Fumio TAKAHASHI, Hideki KURIYAMA

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Abstract

A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the TFT is formed to extend on at least part of the upper surface of the projection, forming an inorganic passivation layer over the TFT and over at least part of the upper surface of the projection, forming an organic passivation layer over the inorganic passivation layer, forming an upper insulating layer over at least part of the organic passivation layer, forming a contact hole in the inorganic passivation layer and the upper insulation layer over the upper surface of the projection, and forming a pixel electrode on the upper insulation layer which contacts the source electrode.

Claims8

Dependent claims

A semiconductor device which is configured to include a substrate,

wherein a transistor and a projection are disposed on the substrate;
a source electrode of the transistor extends so as to cover at least a part of the projection including at least part of an upper surface of the projection;
an inorganic passivation film is formed over the transistor and at least part of the upper surface of the projection;
an organic passivation film is formed on the inorganic passivation film over the transistor;
the projection is formed by an organic material and is formed separately from the organic passivation film;
an upper insulation film is formed over the organic passivation film and on the inorganic passivation film over the upper surface of the projection;
an upper line is formed on the upper insulation film;
and
the upper line is electrically connected to the source electrode through a connection hole formed in the inorganic passivation film and the upper insulation film over the upper surface of the projection.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/798,413Filed 13 Jul 2015
Priority: JP 2012-1076949 May 2012
Published: 5 Nov 2015
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

G02F 1/136227
Active matrix addressed cells: through-hole connection of the pixel electrode to the active element through an insulation layer
H10D 30/6704
Thin-film transistors [TFT]: having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling…
H10D 86/021
Manufacture or treatment: of multiple TFTs
H10D 86/451
Characterised by multiple TFTs: characterised by the compositions or shapes of the interlayer dielectrics

Family

Application13/849,559Continuation · filed 25 Mar 2013
Application14/495,111Continuation · filed 24 Sep 2014
Application14/798,413Continuation
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From the US filing history. Foreign family members aren’t listed.