Aluminum substrate for a thin film transistor
OwnerThomas L. Levendusky, Kirit Shah +3inventors
InventorsThomas L. Levendusky, Kirit Shah, Marcia Gregory, Jeff S. VanBrookhoven, Miltiadis K. Hatalis
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Abstract
A substrate comprises of a recrystallized aluminum alloy. An organic polymer layer coats the top surface of the aluminum substrate. A layer of one of: SiO2, SiN and Al2O3 is on the organic polymer and at least one electrode is adhered to the layer of one of: SiO2, SiN and Al2O3. A method comprises depositing an organic polymer on an aluminum substrate, annealing the aluminum substrate; depositing a layer of one of SiO2, SiN and Al2O3 on the organic polymer; and adhering an electrode to the layer of one of: SiO2, SiN and Al2O3.
Claims20
A device comprising:
- a. a substrate comprised of a recrystallized aluminum alloy;
- b. an organic polymer on top surface of the aluminum substrate;
- C. a layer of one of:
- SiO2, SIN and Al2O3 on the organic polymer;
- and
- d. at least one electrode adhered to the layer of one of SiO2, SiN and Al2O3.
A method comprising:
- a. depositing an organic polymer on an aluminum substrate;
- b. annealing the aluminum substrate;
- c. depositing a layer of one of:
- SiO2, SiN and Al2O3 on the organic polymer;
- and
- d. adhering an electrode to the layer of one of:
- SiO2, SiN and Al2O3.
The method of claim 17 wherein the aluminum substrate comprises:
- a. a top surface;
- and
- b. pores on the top surface.
The method of claim 17 wherein the aluminum substrate has an H temper before annealing and an O Temper after annealing.
The method of claim 17 wherein annealing comprises heating the aluminum substrate to a temperature in the range of 550° F.-650° F. for 2 hrs to 4 hours.
Dependencies are inferred from the claim text.