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US 2015/0318401 A1Published application
Vertically stacked heterostructures including graphene
AssigneeThe Regents of the University of California
InventorsXiangfeng Duan, Woojong Yu, Yuan Liu, Yu Huang
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Abstract
A vertically stacked heterostructure device includes: (1) a substrate; and (2) vertically stacked layers disposed over the substrate and including (a) a source electrode including a layer of graphene; (b) a drain electrode; and (c) a semiconducting channel disposed between the source electrode and the drain electrode. During operation of the device, a current is configured to flow between the source electrode and the drain electrode through the semiconducting channel.
Claims20
A vertically stacked heterostructure device, comprising:
- a substrate;
- and
- vertically stacked layers disposed over the substrate and including
- a source electrode including a layer of graphene;
- a drain electrode;
- and
- a semiconducting channel disposed between the source electrode and the drain electrode,
- wherein, during operation of the device, a current is configured to flow between the source electrode and the drain electrode through the semiconducting channel.
5 more elements
A method of photocurrent generation, comprising:
- providing a vertical stack of layers disposed over a substrate, wherein the vertical stack of layers includes a top electrode, a bottom electrode, and a semiconducting channel disposed between the top electrode and the bottom electrode, and at least one of the top electrode and the bottom electrode includes a layer of graphene;
- and
- generating a photocurrent by illuminating the vertical stack of layers, wherein the photocurrent flows between the top electrode and the bottom electrode through the semiconducting channel, and generating the photocurrent includes applying a back gate voltage to the substrate to modulate the photocurrent.
Dependencies are inferred from the claim text.