Semiconductor device and method of fabricating the same

A semiconductor device comprising:

• a multi-channel active pattern defined by a field insulating layer and extending along a first direction, the multi-channel active pattern including,
• a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer, and
• a second portion on both sides of the first portion, the second portion protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion;
• a gate electrode on the first portion of the multi-channel active pattern, the gate electrode extending along a second direction different from the first direction;
• fin spacers on a part of sidewalls of the second portion protruding further in the upward direction than the top surface of the field insulating layer;
• and
• a source/drain region covering at least part of the fin spacers and contacting the top surface and the sidewalls of the second portion protruding further in the upward direction than the fin spacers.

A semiconductor device comprising:

• a field insulating layer on a substrate;
• a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the multi-channel active pattern including,
• a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer, and
• a second portion on both sides of the first portion, the second portion protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, the second portion having sidewalls with a continuous profile;
• a first gate electrode on the first portion of the first multi-channel active pattern, the first gate electrode extending along a second direction different from the first direction;
• a first source/drain region surrounding the second portion protruding further in the upward direction than a top surface of the field insulating layer;
• a second multi-channel active pattern defined by the field insulating layer and extending along a third direction, the second multi-channel active pattern including,
• a third portion having a top surface protruding further in the upward direction than a top surface of the field insulating layer, and
• a fourth portion on both sides of the third portion in the third direction, the fourth portion having a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the third portion;
• a second gate electrode on the third portion of the second multi-channel active pattern, the second gate electrode extending along a fourth direction different from the third direction;
• fin spacers on a part of sidewalls of the fourth portion protruding further in the upward direction than the top surface of the field insulating layer;
• and
• a second source/drain region contacting the top surface and the sidewalls of the fourth portion protruding further than the fin spacers.