Methods of forming epi semiconductor material in a trench formed above a semiconductor device and the resulting devices

A method of forming a device comprised of a gate structure, a source region and a drain region that are positioned on opposite sides of said gate structure, wherein the method comprises:

• forming said gate structure above an active region of a semiconductor substrate, said gate structure having sidewalls and opposing end surfaces, wherein a first portion of said gate structure is positioned above said active region and second portions of said gate structure are positioned above an isolation region formed in said substrate;
• forming an etch stop layer on said sidewalls and said end surfaces of the entire gate structure;
• removing the portions of said etch stop layer positioned on said first portion of said gate structure while leaving said etch stop layer positioned on said second portions of said gate structure;
• forming a sidewall spacer adjacent opposite sides of said first portion of said gate structure so as to define first and second continuous epi formation trenches comprised of said spacer, wherein said first epi formation trench is positioned above at least a portion of said source region and said second epi formation trench is positioned above at least a portion of said drain region;
• and
• forming an epi semiconductor material on said active region within each of said first and second continuous epi formation trenches.

A device, comprising:

• a gate structure positioned above an active region of a semiconductor substrate, said gate structure having an axial length in a gate width direction of said device, wherein a first portion of said gate structure is positioned above said active region and second portions of said gate structure are positioned above an isolation region formed in said substrate;
• first and second continuous epi formation trenches that extend for less than said axial length of said gate structure, wherein said first epi formation trench is positioned above at least a portion of a source region and said second epi formation trench is positioned above at least a portion of a drain region;
• and
• an epi semiconductor material positioned on said active region within each of said first and second continuous epi formation trenches.