Semiconductor device and method of manufacturing the same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorHuilong ZHU
Life of this patent
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Abstract
Provided are a semiconductor device and a method of manufacturing the same. An example device may include: a fin formed on a substrate; a gate stack formed on the substrate and intersecting the fin, wherein the gate stack is isolated from the substrate by an isolation layer, and a Punch-Through Stopper (PTS) formed under the fin, including a first section directly under a portion of the fin where the fin intersects the gate stack and second sections on opposite sides of the first section, wherein the second sections each have a doping concentration lower than that of the first section.
Claims13
A method of manufacturing a semiconductor device, comprising:
- forming a fin structure on a substrate;
- forming an isolation layer on the substrate, wherein the isolation layer exposes a portion of the fin structure, which serves as a fin for the semiconductor device;
- performing first ion implantation to form a Punch-Through Stopper (PTS) under the fin;
- forming a gate stack intersecting the fin structure on the isolation layer;
- and
- performing second ion implantation to compensate for the PTS.
A semiconductor device comprising:
- a fin formed on a substrate;
- a gate stack formed on the substrate and intersecting the fin, wherein the gate stack is isolated from the substrate by an isolation layer, and
- a Punch-Through Stopper (PTS) formed under the fin, including a first section directly under a portion of the fin where the fin intersects the gate stack and second sections on opposite sides of the first section, wherein the second sections each have a doping concentration lower than that of the first section.
Dependencies are inferred from the claim text.