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US 2015/0318394 A1Published application
Tunable Stressed Polycrystalline Silicon on Dielectrics in an Integrated Circuit
AssigneeInfineon Technologies AG
InventorsMatthias Hierlemann, Chandrasekhar Sarma
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Abstract
A method of forming an integrated circuit device is disclosed. A polycrystalline silicon layer is formed in direct contact with a dielectric material so that the dielectric material induces a stress in the polycrystalline silicon layer as the polycrystalline silicon layer is formed. A MOS transistor that includes a gate comprising the polycrystalline silicon is then completed.
Claims20
A method of forming an integrated circuit device, the method comprising:
- forming a dielectric material;
- forming a polycrystalline silicon layer in direct contact with the dielectric material so that the dielectric material induces a stress in the polycrystalline silicon layer as the polycrystalline silicon layer is formed;
- and
- completing formation of a MOS transistor that includes a gate comprising the polycrystalline silicon.
1 more element
A method of manufacturing an integrated circuit device, the method comprising:
- etching a channel in a substrate of the integrated circuit device;
- depositing a layer of dielectric material on sidewalls within the channel;
- and
- depositing polycrystalline silicon over the dielectric material layer within the channel, wherein stress is induced in the polycrystalline silicon by the dielectric material as the polycrystalline silicon is being deposited.
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A transistor, comprising:
- a gate dielectric layer overlying a semiconductor body;
- an outer sidewall region overlying the gate dielectric;
- an inner sidewall layer overlying the gate dielectric adjacent inner sidewalls of the outer sidewall region, the inner sidewall layer comprising a material selected from the group consisting of silicon aluminum oxynitride (SiAlON), mullite (3Al2O3.2SiO2), and alumina (Al2O3);
- and
- polycrystalline silicon overlying the gate dielectric layer and in physical contact with the inner sidewall layer.
2 more elements
Dependencies are inferred from the claim text.