Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTakeru Matsuoka, Yasuhito Saito, Seiichiro Kamiyama
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor device includes: a first region including: a first semiconductor layer; a first semiconductor region; a second semiconductor region; a third semiconductor region having higher impurity concentration than the first semiconductor region; a first electrode; a second electrode; an insulating film; a third electrode; a fourth electrode, a second region including a pad electrode, and the third region including: the first semiconductor layer; the first semiconductor region; a third semiconductor region; the first electrode; the second electrode; and a first insulating layer.
Claims7
A semiconductor device comprising:
- a first semiconductor layer of a first conductivity type;
- a first semiconductor region of a second conductivity type provided on the first semiconductor layer;
- a second semiconductor region of the first conductivity type provided on the first semiconductor region;
- a first electrode electrically connected to the second semiconductor region;
- a second electrode electrically connected to the first semiconductor layer;
- a third electrode facing the first semiconductor layer, the first semiconductor region, and the second semiconductor region via a first insulating film;
- a pad electrode provided on the first semiconductor layer, and the pad electrode being electrically connected to the third electrode;
- a plurality of second insulating films provided under the gate pad;
- and
- a third semiconductor region of a second conductivity type provided between the gate pad and the first semiconductor region.
Dependencies are inferred from the claim text.