Finfet and method of manufacturing the same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsHuilong Zhu, Qingqing Liang
Life of this patent
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Abstract
A FinFET and a method of manufacturing the same are disclosed. The method includes forming a semiconductor fin. The method further includes forming a first region, the first region being one of a source region and a drain region. The method further includes forming a sacrificial spacer. The method further includes forming a second region with the sacrificial spacer as a mask, the second region being the other one of the source region and the drain region. The method further includes removing the sacrificial spacer. The method further includes replacing the sacrificial spacer with a gate stack comprising a gate conductor and a gate dielectric that separates the gate conductor from the semiconductor fin.
Claims9
A method of manufacturing a FinFET, comprising:
- forming a semiconductor fin;
- forming a first region, the first region being one of a source region and a drain region;
- forming a sacrificial spacer;
- forming a second region with the sacrificial spacer as a mask, the second region being the other one of the source region and the drain region;
- removing the sacrificial spacer;
- and
- replacing the sacrificial spacer with a gate stack comprising a gate conductor and a gate dielectric that separates the gate conductor from the semiconductor fin.
A FinFET, comprising:
- a semiconductor fin;
- a source region and a drain region disposed in the semiconductor fin;
- a shielding layer disposed on one of the source region and the drain region, the shielding layer having a sidewall opposed to the other one of the source region and the drain region;
- and
- a gate stack disposed between the source region and the drain region, the gate stack comprising a gate dielectric and a gate conductor that separates the gate conductor from the semiconductor fin.
Dependencies are inferred from the claim text.