Silicon carbide semiconductor device and manufacturing method thereof

A method of manufacturing a silicon carbide semiconductor device comprising the steps of:

• preparing a substrate of a first conductivity type having a first main surface and a second main surface opposite to the first main surface and made of silicon carbide;
• forming an epitaxial layer made of silicon carbide on the first main surface of the substrate;
• forming a first body layer of a second conductivity type different from the first conductivity type in the epitaxial layer;
• forming a second body layer of the second conductivity type different from the first conductivity type in the epitaxial layer;
• forming a first source region of the first conductivity type in the first body layer;
• forming a second source region of the first conductivity type in the second body layer;
• forming a first channel region of the second conductivity type in contact with the first source region positioned in the first body layer located between a lateral end portion of the first body layer and a lateral end portion of the first source region;
• forming a second channel region of the second conductivity type in contact with the second source region positioned in the second body layer located between a lateral end portion of the second body layer and a lateral end portion of the second source region;
• forming a gate insulating film in contact with the first channel region and the second channel region;
• forming a gate electrode in contact with the gate insulating film;
• forming a drain region of the first conductivity type in the substrate so as to have a predetermined depth from the second main surface of the substrate;
• and
• recessing the first and second source regions and the first and second channel regions,
• wherein the body layers are formed after forming the recessed regions.