Devices, systems, and methods related to removing parasitic conduction in semiconductor devices
AssigneeMicron Technology, Inc.
InventorsMartin F. Schubert, Vladimir Odnoblyudov, Cem Basceri, Thomas Gehrke
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AssigneeMicron Technology, Inc.
InventorsMartin F. Schubert, Vladimir Odnoblyudov, Cem Basceri, Thomas Gehrke
Estimating the term…
Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.
A semiconductor device formed from a common substrate, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.