Semiconductor device

A semiconductor device comprising a semiconductor substrate that comprises an anode region and a cathode region, wherein

• the anode region comprises:
• a first conductivity type first region having a peak impurity concentration of the first conductivity type at a position that is at a first depth from a surface of the semiconductor substrate;
• a first conductivity type second region having a maximum impurity concentration of the first conductivity type at a position that is at a second depth, and on a surface side of the semiconductor substrate than the first depth;
• and
• a third region provided between the first region and the second region, and having an impurity concentration of the first conductivity type that is equal to or less than 1/10 (one-tenth) of the surface of the semiconductor substrate.

A semiconductor device comprising a semiconductor substrate that comprises a diode region and an IGBT region, wherein

• the diode region comprises an anode region and a cathode region,
• the anode region comprises:
• a first conductivity type first region having a maximum impurity concentration of the first conductivity type at a position that is at a first depth from a surface of the semiconductor substrate;
• and
• a first conductivity type second region having a maximum impurity concentration of the first conductivity type at a position that is at a second depth, and on a surface side of the semiconductor substrate than the first depth, the IGBT region comprises:
• a first conductivity type body region;
• a second conductivity type drift region;
• a second conductivity type emitter region;
• and
• a first conductivity type collector region, and
• the body region has:
• a first maximum impurity concentration of the first conductivity type at a position that is at the first depth from the surface of the semiconductor substrate;
• and
• a second maximum impurity concentration of the first conductivity type at a position on the surface side of the semiconductor substrate than the first depth.

A semiconductor device comprising a semiconductor substrate that comprises an anode region and a cathode region, wherein

• the anode region comprises:
• a first conductivity type first region which is formed by a first ion implantation process to have a peak impurity concentration of a first conductivity type at a position that is at a first depth from a surface of the semiconductor substrate;
• a first conductivity type second region which is formed by a second ion implantation process to have a maximum impurity concentration of the first conductivity type at a position that is at a second depth from the surface of the semiconductor substrate;
• a third region provided between the first region and the second region, and having a impurity concentration of the first conductivity type that is equal to or less than 1/10 (one-tenth) of the surface of the semiconductor substrate.