Thin Film Transistor

A method of forming a set of thin film transistors (TFT), the method comprising:

• forming a plurality of layers of conductor material;
• forming a plurality of layers of another material that alternates with the conductor material;
• forming a first hole in the plurality of layers of conductor material and the plurality of layers of another material, the first hole having a sidewall;
• forming a gate dielectric layer for the TFTs on the sidewall of the first hole leaving a second hole inside the gate dielectric layer;
• forming a gate electrode layer for the TFTs in the second hole on the gate dielectric layer;
• forming bodies for the TFTs adjacent to the gate dielectric layer;
• and
• forming a drain region and a source region for each of the TFTs in the layers of conductor material adjacent to the bodies.

A method comprising:

• forming a plurality of layers of conductor material above a substrate;
• forming a plurality of layers of another material that alternates with the conductor material above the substrate;
• forming non-volatile memory cells in the plurality of layers of conductor material, wherein the non-volatile memory cells are part of a three-dimensional memory array;
• etching through each of the layers of the conductor material and each of the layers of the other material to form a first hole, the first hole having a sidewall;
• forming a gate dielectric layer for thin film transistors (TFTs) on the sidewall of the first hole leaving a second hole inside the gate dielectric layer;
• forming a gate electrode layer for the TFTs in the second hole on the gate dielectric layer;
• forming bodies for the TFTs adjacent to the gate dielectric layer;
• and
• forming a drain region and a source region for each of the TFTs in the layers of conductor material adjacent to the bodies.