Super-junction structures having implanted regions surrounding an n epitaxial layer in deep trench

A Method for manufacturing a super junction trench MOSFET comprising the steps of:

• growing a first epitaxial layer of a first conductivity type upon a heavily doped substrate layer of said first conductivity type;
• forming a deep trench mask covering a top surface of said first epitaxial layer;
• applying a trench mask to form a deep trench extending into said substrate layer by successively dry oxide etch and dry silicon etch;
• carrying out angle ion implantations of said first conductivity type dopant and driving-in to form a first type column regions with column shape within said first epitaxial layer;
• carrying out angle ion implantations of a second conductivity type dopant and diffusion to form a second type column regions with column shape adjacent to sidewalls of said deep trench, in parallel with and surrounding said first type column regions;
• removing said hard mask. and
• form a second epitaxial layer of said first conductivity type into said deep trench.