Low leakage, high frequency devices
AssigneeInternational Business Machines Corporation
InventorsTheodore J. LETAVIC, Max G. LEVY, Santosh SHARMA, Yun SHI
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Abstract
Low leakage, high frequency devices and methods of manufacture are disclosed. The method of forming a device includes implanting a lateral diffusion drain implant in a substrate by a blanket implantation process. The method further includes forming a self-aligned tapered gate structure on the lateral diffusion drain implant. The method further includes forming a halo implant in the lateral diffusion drain implant, adjacent to the self-aligned tapered gate structure and at least partially under a source region of the self-aligned tapered gate structure.
Claims20
A method of forming a device, comprising:
- implanting a lateral diffusion drain implant in a substrate by a blanket implantation process;
- forming a self-aligned tapered gate structure on the lateral diffusion drain implant;
- and
- forming a halo implant in the lateral diffusion drain implant, adjacent to the self-aligned tapered gate structure and at least partially under a source region of the self-aligned tapered gate structure.
A method, comprising:
- forming a lateral diffusion drain implant in a substrate by a segmented blanket implant process, without using a mask;
- forming a gate structure on the lateral diffusion drain implant;
- and
- forming a self-aligned halo implant in the lateral diffusion drain implant and at least partially under a source region of the gate structure by an angled implant process.
A structure, comprising:
- a blanket lateral diffusion drain implant in a substrate;
- a self-aligned tapered gate structure formed on the lateral diffusion drain implant;
- and
- a self-aligned halo implant in the lateral diffusion drain implant and at least partially under a source region of the gate structure, wherein the halo implant abuts directly against the blanket lateral diffusion drain.
Dependencies are inferred from the claim text.