Semiconductor device
AssigneeRohm Co., Ltd.
InventorsHeiji WATANABE, Takuji HOSOI, Takayoshi SHIMURA, Ryota NAKAMURA, Yuki NAKANO, Shuhei MITANI, Takashi NAKAMURA, Hirokazu ASAHARA
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Abstract
A semiconductor device according to the present invention has a MIS structure that includes a semiconductor layer, a gate insulating film in contact with the semiconductor layer, and a gate electrode formed on the gate insulating film, and the gate insulating film includes an AlON layer with a nitrogen composition of 5% to 40%. A semiconductor device is thereby provided with which electron trapping in the gate insulating film can be reduced and shifting of a threshold voltage Vth can be suppressed.
Claims11
A semiconductor device comprising an MIS structure that includes:
- a semiconductor layer;
- a gate insulating film in contact with the semiconductor layer;
- and
- a gate electrode formed on the gate insulating film;
- and
- wherein the gate insulating film includes an AlON layer with a nitrogen composition of 5% to 40%.
Dependencies are inferred from the claim text.