Semiconductor device
AssigneeUnisantis Electronics Singapore Pte. Ltd.
InventorsFUJIO MASUOKA, NOZOMU HARADA, HIROKI NAKAMURA
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first planar semiconductor (e.g., silicon) layer, first and second pillar-shaped semiconductor (e.g., silicon) layers, a first gate insulating film, a first gate electrode, a second gate insulating film, a second gate electrode, a first gate line connected to the first and second gate electrodes, a first n-type diffusion layer, a second n-type diffusion layer, a first p-type diffusion layer, and a second p-type diffusion layer. A center line extending along the first gate line is offset by a first predetermined amount from a line connecting a center of the first pillar-shaped semiconductor layer and a center of the second pillar-shaped semiconductor layer.
Claims1
A semiconductor device, comprising:
- a first pillar-shaped semiconductor layer and a second pillar-shaped semiconductor layer;
- a first gate insulating film formed around the first pillar-shaped semiconductor layer;
- a first gate electrode formed around the first gate insulating film;
- a second gate insulating film formed around the second pillar-shaped semiconductor layer;
- a second gate electrode formed around the second gate insulating film;
- a gate line connected to the first and second gate electrodes and extending from the first pillar shaped semiconductor layer to the second pillar-shaped semiconductor layer;
- the gate line having a width with a center and the gate line having a center line that extends along the center of the width;
- and
- the center line of the gate line being offset by a first predetermined amount from a line connecting a center of the first pillar-shaped semiconductor layer and a center of the second pillar-shaped semiconductor layer.
Dependencies are inferred from the claim text.