Controlling Gate Formation for High Density Cell Layout

A semiconductor structure, comprising:

• a first active region and a second active region in a substrate, the first active region and the second active region separated by an insulating region;
• a gate dielectric layer disposed over the substrate;
• a gate electrode layer disposed over the gate dielectric layer;
• a horizontal gate structure extending over the insulating region between the first active region and the second active region;
• and
• a first vertical gate structure and a second vertical gate structure, the first vertical gate structure including an endcap, wherein the endcap extends between about 40 nm and about 60 nm from an edge of the first active region.

A semiconductor structure comprising:

• a substrate having a first active region, a second active region that is parallel to the first active region, and an insulating region separating the first active region and the second active region;
• a first vertical gate structure extending over the first active region, the second active region and the insulating region;
• a second vertical gate structure extending over the first active region, the second active region and the insulating region, wherein the second vertical gate structure is parallel to the first vertical gate structure;
• a first horizontal gate structure extending over the insulating region between the first active region and the second active region, the first horizontal gate structure coupling the first vertical gate structure and the second vertical gate structure;
• and
• a second horizontal gate structure,
• wherein the first active region is between the second horizontal gate structure and the first horizontal gate structure,
• wherein there is a gap of about 65 nm to about 95 nm between the second horizontal gate structure and the first vertical gate structure.