Transistor and method of fabricating the same

A method of fabricating a transistor, the method comprising:

• providing a substrate including a semiconductor layer;
• forming a gate insulating layer and a gate electrode at a position corresponding to a core of the semiconductor layer;
• forming an interlayer insulating layer covering the gate electrode and exposing both sides of the semiconductor layer;
• forming an electrode layer extending along the substrate and contacting the both sides of the semiconductor layer;
• forming a conductive layer covering the electrode layer;
• forming a first electrode and a second electrode spaced from the first electrode by patterning the electrode layer;
• and
• forming a conductive line on the first electrode by removing the conductive layer on the second electrode,
• wherein the first electrode contacts one side of the semiconductor layer and the second electrode contacts the other side of the semiconductor layer and has a coplanar with the semiconductor layer and the first electrode.