Reducing leakage current in semiconductor devices
AssigneeMassachusetts Institute of Technology
InventorsBin Lu, Alison de Nazareth Matioli, Tomas Apostol Palacios
Life of this patent
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Abstract
A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.
Claims24
A semiconductor device, comprising:
- a first semiconductor region comprising silicon;
- a second semiconductor region comprising a nitride semiconductor material, the second semiconductor region being formed over the first semiconductor region;
- and
- a current blocking structure formed in the first semiconductor region between first and second terminals of the semiconductor device, the current blocking structure being configured to reduce current flow in the first semiconductor region between the first and second terminals.
A semiconductor device, comprising:
- a first region comprising a first semiconductor material;
- a second region comprising a second semiconductor material, the second region being formed over the first region;
- and
- a current blocking structure formed in the first region between first and second terminals of the semiconductor device, the current blocking structure being configured to reduce current flow in the first region between the first and second terminals.
-26. (canceled)
A method of forming a semiconductor device, the method comprising:
- etching to remove portions of a first semiconductor region comprising silicon;
- and
- forming a second semiconductor region comprising a nitride semiconductor material over the first semiconductor region.
-36. (canceled)
Dependencies are inferred from the claim text.