Semiconductor film, semiconductor device, display device, module, and electronic device

An oxide semiconductor film,

• wherein the oxide semiconductor film has a plurality of electron diffraction patterns, which are observed in such a manner that a surface over which the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm while a position of the oxide semiconductor film and a position of the electron beam are relatively moved,
• wherein the plurality of electron diffraction patterns include 50 or more electron diffraction patterns observed in different areas,
• wherein a sum of a percentage of first electron diffraction patterns and a percentage of second electron diffraction diffractions accounts for 100% of the 50 or more electron diffraction patterns,
• wherein the first electron diffraction patterns account for 50% or more of the 50 or more electron diffraction patterns,
• wherein the first electron diffraction pattern includes observation points that are not symmetry or a plurality of observation points disposed in a circular pattern, and
• wherein the second electron diffraction pattern includes observation points corresponding to vertices of a hexagon.

An oxide semiconductor film comprising:

• crystal parts randomly arranged,
• wherein an average size of the crystal parts in a longitudinal direction is greater than or equal to 1 nm and less than or equal to 3 nm,
• wherein the oxide semiconductor film comprises indium, an element M, and zinc, and
• wherein the element M is at least one of aluminum, gallium, yttrium, and tin.

An oxide semiconductor film comprising:

• indium, an element M, and zinc,
• wherein the element M is at least one of aluminum, gallium, yttrium, and tin,
• wherein an atomic ratio of the indium to the element M and the zinc satisfies In:M:Zn=x:y:z,
• wherein, in an equilibrium diagram with vertices of the indium, the element M, and the zinc, the atomic ratio is within a range of an area surrounded by line segments that connect first coordinates (x:y:z=8:14:7), second coordinates (x:y:z=2:4:3), third coordinates (x:y:z=2:5:7), fourth coordinates (x:y:z=51:149:300), fifth coordinates (x:y:z=46:288:833), sixth coordinates (x:y:z=0:2:11), seventh coordinates (x:y:z=0:0:1), eighth coordinates (x:y:z=1:0:0), and the first coordinates in this order,
• wherein the range includes the first coordinates to the sixth coordinates and does not include the seventh coordinates and the eighth coordinates, and
• wherein a density of the oxide semiconductor film is 90% or higher of a density of a single crystal oxide semiconductor film having the same atomic ratio.

An oxide semiconductor film comprising:

• crystal parts,
• wherein the crystal parts have no alignment,
• wherein an average size of the crystal parts in a longitudinal direction is greater than or equal to 1 nm and less than or equal to 3 nm,
• wherein a density of the oxide semiconductor film is higher than or equal to 5.7 g/cm3 and lower than or equal to 6.49 g/cm3, and
• wherein the oxide semiconductor film comprises indium, gallium, and zinc.

An oxide semiconductor film comprising:

• crystal parts,
• wherein the crystal parts have no alignment,
• wherein a first average size of the crystal parts in a longitudinal direction is A nm, and A is greater than or equal to 1 and less than or equal to 3,
• wherein a second average size of the crystal parts in a longitudinal direction after the oxide semiconductor film is irradiated with electron beam energy of greater than or equal to 1×107 e−/nm2 and less than 4×108 e−/nm2 is greater than A×0.7 nm and less than A×1.3 nm, and
• wherein the oxide semiconductor film comprises indium, gallium, and zinc.