Semiconductor Devices Including Polar Insulation Layer Capped by Non-Polar Insulation Layer

A method of fabricating a semiconductor device, the method comprising:

• growing a thermal oxide layer on a silicon carbide substrate;
• and
• annealing the thermal oxide layer in a gas comprising phosphorus to convert the thermal oxide layer to a phosphosilicate glass (PSG) layer;
• and
• forming a non-polar insulation layer above the PSG layer, such that a thickness of the non-polar insulation layer is greater than fifty percent of a combined thickness of the PSG and non-polar insulation layers.

A semiconductor device comprising:

• a semiconductor substrate;
• a polar insulation layer disposed on the semiconductor substrate, the polar insulation layer comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate;
• a non-polar insulation layer disposed above the polar insulation layer;
• and
• an electrical contact disposed above the non-polar insulation layer.

A semiconductor device comprising:

• a silicon carbide substrate;
• a phosphosilicate glass (PSG) layer disposed on the silicon carbide substrate;
• a silicon dioxide (SiO2) layer disposed above the PSG layer;
• and
• an electrical contact disposed above the SiO2 layer;
• wherein a thickness of the PSG layer is less than fifty percent of a combined thickness of the PSG and SiO2 layers.