Back to results
US 2015/0318356 A1Published application
Method and arrangement for reducing contact resistance of two-dimensional crystal material
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsKunpeng JIA, Yajuan SU, Huilong ZHU, Chao ZHAO
Life of this patent
Estimating the term…
Abstract
A method and an arrangement for reducing a contact resistance of a two-dimensional crystal material are provided. An example method may include forming a contact material layer on a two-dimensional crystal material layer; performing ion implantation; and performing thermal annealing.
Claims18
A method, comprising:
- forming a contact material layer on a two-dimensional crystal material layer;
- performing ion implantation on at least the two-dimensional crystal material layer;
- and
- performing thermal annealing of the contact material layer and the two-dimensional crystal material layer.
1 more element
An arrangement, comprising:
- a two-dimensional crystal material layer;
- and
- a contact material layer disposed on the two-dimensional crystal material layer,
- wherein at an interface between the two-dimensional crystal material layer and the contact material layer, vacancies in the two-dimensional crystal material layer, a material of the contact material layer, and, implanted ions interact with each other to form a low-resistance state.
1 more element
Dependencies are inferred from the claim text.