Back to results
US 2015/0318354 A1Published application
Semiconductor device and manufacturing method therefor
AssigneeThe Institute of Microelectronics Chinese Academy of Science
InventorsHuaxiang Yin, Huilong Zhu, Xiaolong Ma
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a fin extending on a substrate along a first direction; a gate extending along a second direction across the fin; and source/drain regions and a gate spacer on the fin at opposite sides of the gate, in which there is a surface layer on the top and/or sidewalls of the fin.
Claims10
A method for manufacturing a semiconductor device, comprising:
- forming a fin extending along a first direction on a substrate;
- forming a dummy gate stack structure extending along a second direction on the fin;
- forming a gate spacer and source/drain regions at opposite sides of the dummy gate stack structure in the first direction;
- removing the dummy gate stack structure to form a gate trench;
- forming a surface layer on the top and/or sidewalls of the fin;
- and
- forming a gate stack structure in the gate trench.
4 more elements
A semiconductor device, comprising:
- a fin extending on a substrate along a first direction;
- a gate extending along a second direction across the fin;
- and
- source/drain regions and a gate spacer on the fin at opposite sides of the gate,
- wherein there is a surface layer on the top and/or sidewalls of the fin.
2 more elements
Dependencies are inferred from the claim text.