Semiconductor device and method for manufacturing the same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorHuilong ZHU
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a fin structure. The method includes: forming a first semiconductor layer and a second semiconductor layer sequentially on a substrate; patterning the second and first semiconductor layers to form an initial fin; selectively etching the first semiconductor layer of the initial fin so that the first semiconductor layer has a lateral recess; forming an isolation layer having a portion that fills the lateral recess, wherein the isolation layer, except the portion that fills the lateral recess, has a top surface lower than a top surface of the first semiconductor layer but higher than a bottom surface of the first semiconductor layer, and thus defines a fin above the isolation layer; and forming a gate stack intersecting the fin on the isolation layer.
Claims14
A method for manufacturing a semiconductor device, comprising:
- forming a first semiconductor layer and a second semiconductor layer sequentially on a substrate;
- patterning the second and first semiconductor layers to form an initial fin;
- selectively etching the first semiconductor layer of the initial fin so that the first semiconductor layer has a lateral recess;
- forming an isolation layer having a portion that fills the lateral recess, wherein the isolation layer, except the portion that fills the lateral recess, has a top surface lower than a top surface of the first semiconductor layer but higher than a bottom surface of the first semiconductor layer, and thus defines a fin above the isolation layer;
- and
- forming a gate stack intersecting the fin on the isolation layer.
A semiconductor device, comprising:
- a substrate;
- patterned first and second semiconductor layers sequentially formed on a substrate, wherein the first semiconductor layer has a lateral recess relative to the second semiconductor layer;
- an isolation layer formed on the substrate, having a portion that fills the lateral recess, wherein the isolation layer, except the portion that fills the lateral recess, has a top surface lower than a top surface of the first semiconductor layer but higher than a bottom surface of the first semiconductor layer, and thus defines a fin above the isolation layer;
- and
- a gate stack formed on the isolation layer and intersecting the fin.
Dependencies are inferred from the claim text.