Back to results
US 2015/0318341 A1Published application
Semiconductor Device and Method for Forming Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJui-Yao Lai, Chun-Yi Lee, Shyh-Wei Wang, Yen-Ming Chen
Life of this patent
Estimating the term…
Abstract
A system and method for forming a resistor system is provided. An embodiment comprises a resistor formed in a U-shape. The resistor may comprise multiple layers of conductive materials, with a dielectric layer filling the remainder of the U-shape. The resistor may be integrated with a dual metal gate manufacturing process or may be integrated with multiple types of resistors.
Claims20
A semiconductor device comprising:
- a first resistor on a semiconductor substrate, the first resistor comprising a first top layer;
- and
- a second resistor on the semiconductor substrate, the second resistor comprising a second top layer, wherein the second top layer comprises a different material than the first top layer.
A semiconductor device comprising:
- a first resistor over a shallow trench isolation within a semiconductor substrate, wherein the first resistor has a first top material, wherein the first top material within the first resistor has a first shape;
- and
- a second resistor over the substrate, wherein the second resistor has the first top material, wherein the first top material within the second resistor is planar with the first resistor and has a second shape different from the first shape.
A semiconductor device comprising:
- a dielectric layer within a substrate;
- and
- a first resistor on the dielectric layer, wherein the first resistor comprises:
- a first region with a first longitudinal axis perpendicular with a major surface of the substrate, the first region having a first height and a first top surface, the first top surface comprising a first material;
- a second region with a second longitudinal axis perpendicular with the major surface of the substrate, the second region having the first height;
- and
- a third region extending between the first region and the second region, wherein the third region has a second height smaller than the first height;
- and
- a second resistor on the dielectric layer, wherein the second resistor has a second top surface planar with the first top surface, the second top surface comprising a second material different from the first material.
6 more elements
Dependencies are inferred from the claim text.