Integrated thinfilm resistor and mim capacitor with a low serial resistance
AssigneeTexas Instruments Deutschland GmbH
InventorChristoph DIRNECKER
Life of this patent
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Abstract
An electronic device comprising a semiconductor structure having a back end capacitor and a back end thin film resistor and a method of manufacturing the same. The semiconductor structure includes a first dielectric layer, a bottom plate of the capacitor and a thin film resistor body. The bottom plate and the resistor body are laterally spaced apart portions of the same thin film layer. The bottom plate further includes a conductive layer overlying the thin film layer. A second dielectric layer is disposed on the conductive layer of the bottom plate of the capacitor. A top plate of the capacitor is disposed on the second dielectric layer.
Claims16
An electronic device comprising a semiconductor structure having:
- a first dielectric layer;
- a resistor body of a resistor including a first portion of a thin film layer on the first dielectric layer;
- a bottom plate of a capacitor including a second portion of the thin film layer and a conductive layer overlying the second portion of the thin film layer;
- a second dielectric layer disposed on the bottom plate of the capacitor;
- and
- a top plate of the capacitor disposed on the second dielectric layer over the bottom plate;
- wherein the bottom plate and the resistor body are laterally spaced apart layers which are both disposed on the first dielectric layer and which are composed of a same thin film material.
A method of manufacturing an electronic device comprising the steps of:
- depositing a first dielectric layer over a semiconductor substrate;
- depositing a thin film layer for a bottom plate of a capacitor and a resistor body;
- depositing a first conductive layer over the thin film layer;
- depositing a second dielectric layer on the first conductive layer;
- depositing a second conductive layer on the second dielectric layer;
- patterning and etching to remove the second conductive layer and the second dielectric layer in a resistor area and form a top plate of the capacitor and a capacitor dielectric;
- removing the first conductive layer in the resistor area leaving a portion of the first conductive layer in the capacitor;
- etching a portion of the thin film layer to form the resistor body and the bottom plate of the capacitor, wherein the bottom plate further includes the portion of the first conductive layer;
- wherein both the bottom plate and the resistor body layer are deposited on the first dielectric layer in a common process step, and wherein the bottom plate and the resistor body are laterally spaced apart portions of the same thin film layer.
The method of claim 12, wherein the method further comprises the steps of:
- forming a first metallization level over the semiconductor substrate prior to depositing the first dielectric layer,
- depositing a third dielectric layer on the top plate of the capacitor,
- forming a second metallization level over the third dielectric layer.
Dependencies are inferred from the claim text.