Multifunctional zinc oxide nano-structure-based circuit building blocks for re-configurable electronics and optoelectronics

A thin film transistor/memory resistor (1T1R) device component, comprising:

• (a) a substrate;
• (b) a bipolar resistive switching device, comprising a nanostructured thin film disposed between first and second metal electrodes, said nanostructured thin film comprising a transition metal doped ZnO ternary compound;
• and
• (c) a thin film transistor (TFT) comprising:
• (i) a gate electrode, a source electrode and a drain electrode;
• (ii) a gate dielectric layer contacting said gate electrode and said source and drain electrodes and separating said source and drain electrodes from said gate electrode;
• and
• (iii) a semiconductor channel layer contacting and separating said source and drain electrodes, said channel layer comprising a MgxZn1-xO film, wherein 0≦x≦0.06;
• wherein one of said source, drain or gate electrodes is in conductive contact with said second electrode;
• and
• wherein one of said first electrode, said dielectric layer or said gate electrode is disposed on said substrate when said structure is vertically integrated, and both of the first metal electrode and either said dielectric layer or said gate electrode are disposed on said substrate when said structure is horizontally integrated.