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US 2015/0318331 A1Published application
Method, system and device for recessed contact in memory array
AssigneeMicron Technology, Inc.
InventorsFabio Pellizzer, Antonino Rigano, Marcello Mariani, Augusto Benvenuti
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Abstract
Embodiments disclosed herein may relate to forming a contact region for an interconnect between a selector transistor and a word-line electrode in a memory device.
Claims21
A method, comprising:
- forming one or more recessed word-line contact regions in a first material of a phase change memory array, including performing a pitch multiplication operation.
The method of claim 21, wherein the space is greater than four times the width of the one of the selector transistors.
15-20. (canceled)
The method of claim 27, wherein the selector switches are bipolar junction transistors.
The method of claim 31, wherein the spacer layer comprises silicon oxide.
Dependencies are inferred from the claim text.