Semiconductor device and method of fabricating the same
AssigneeSK hynix Inc.
InventorsJin Hyock KIM, Keun LEE, Young Seok KWON
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Abstract
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.
Claims4
A semiconductor device, comprising:
- a semiconductor substrate in which a word line region is formed;
- and
- a barrier metal layer, formed of a metal nitride, arranged on the word line region and causing a Schottky junction, the barrier metal layer including:
- a first nitride material formed of a nitrified first material;
- and
- a second nitride material formed of a nitrified second material,
- wherein the barrier metal layer is formed of a mixture of the first nitride material and the second nitride material, and
- where any one of the first material or the second material is rich in a metal used to form the metal nitride.
4-26. (canceled)
Dependencies are inferred from the claim text.