Backside illuminated color image sensors and methods for manufacturing the same
AssigneeOmniVision Technologies, Inc.
InventorsWei Zheng, Dyson Hsin-Chih Tai, Vincent Venezia
Life of this patent
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Abstract
A method for manufacturing a backside illuminated color image sensor includes (a) modifying the frontside of an image sensor wafer, having pixel arrays, to produce electrical connections to the pixel arrays, wherein the electrical connections extend depth-wise into the image sensor wafer from the frontside, and (b) modifying the backside of the image sensor wafer to expose the electrical connections.
Claims18
A method for manufacturing a backside illuminated color image sensor, comprising:
- modifying frontside of an image sensor wafer, including pixel arrays, to produce electrical connections to the pixel arrays, the electrical connections extending depth-wise into the image sensor wafer from the frontside;
- exposing the electrical connections from backside of the image sensor wafer;
- after the step of exposing, flattening the backside of the image sensor wafer to provide a flat backside surface;
- and
- after the step of flattening, applying a color filter to the flat backside surface.
(canceled)
A method for manufacturing a backside illuminated color image sensor, comprising:
- modifying frontside of an image sensor wafer, including pixel arrays, to produce electrical connections to the pixel arrays, the electrical connections extending depth-wise into the image sensor wafer from the frontside;
- flattening backside of the image sensor wafer to provide a flat backside surface;
- after the step of flattening, applying a color filter to the flat backside surface;
- and
- after the step of applying, exposing the electrical connections.
A method for manufacturing a backside illuminated color image sensor, comprising:
- modifying frontside of an image sensor wafer, including pixel arrays, to produce electrical connections to the pixel arrays, the electrical connections extending depth-wise into the image sensor wafer from the frontside, the step of modifying the frontside including:
- (a) etching recesses,
- (b) forming lined recesses by depositing electrically insulating liner inside the recesses,
- (c) depositing the electrical connections, each of the electrical connection connecting a portion of bottom of one of the lined recesses to electrical interconnects of one of the pixel arrays, and
- (d) depositing electrically insulating material, the insulating material filling the lined recesses;
- and
- modifying backside of the image sensor wafer to expose the electrical connections.
Dependencies are inferred from the claim text.