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US 2015/0318324 A1Published application
Solid-state imaging device and camera
AssigneeSony Corporation
InventorYoshiharu Kudoh
Life of this patent
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Abstract
A solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.
Claims10
(canceled)
An imaging device comprising:
- a plurality of pixels, each of the pixels including photoelectric conversion regions, transfer transistors, and a floating diffusion region,
- wherein each of the transfer transistor includes a gate electrode that has a first edge facing the photoelectric conversion region and a second edge facing the floating diffusion region, the second edge being longer than the first edge,
- wherein the second edge includes a second side extending parallel to a row direction and a third side extending parallel to a column direction,
- wherein the first edge includes a first side extending along a first direction different from the row direction and the column direction, and
- wherein the photoelectric conversion regions and the transfer transistors share the floating diffusion region.
2 more elements
An imaging device comprising:
- a plurality of pixels, at least one of the pixels including a first photoelectric conversion region, a second photoelectric conversion region, a first transfer transistor, a second transfer transistor, and a floating diffusion region,
- wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region in a column direction,
- wherein a gate electrode of the first transfer transistor is arranged between the first photoelectric conversion region and the floating diffusion region,
- wherein a gate electrode of the second transfer transistor is arranged between the second photoelectric conversion region and the floating diffusion region,
- wherein each of the gate electrodes of the first and second transfer transistors has a first edge facing their respective photoelectric conversion region and a second edge facing the floating diffusion region, the second edge being longer than the first edge,
- wherein the second edge includes a second side extending parallel to a row direction and a third side extending parallel to a column direction,
- wherein the first edge includes a first side extending along a first direction that is different from the row direction and the column direction, and
- wherein the first and second transfer transistors share the floating diffusion region.
5 more elements
Dependencies are inferred from the claim text.