Method and apparatus for reducing crosstalk in cmos image sensor
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsWenjie Peng, Minwei Xi
Life of this patent
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Abstract
A CMOS image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes a semiconductor substrate having a front side and a back side, at least two pixels disposed in the first side, a shallow trench isolation disposed in the front side between the at least two pixels, and a crosstalk reduction element disposed in the back side at a location above the shallow trench isolation. The crosstalk reduction element reduces optical and electrical crosstalk and improves the image quality of the CMOS image sensor.
Claims18
A CMOS image sensor comprising:
- a semiconductor substrate having a front side and a back side;
- at least two pixels disposed in the first side;
- a shallow trench isolation disposed in the front side between the at least two pixels;
- and
- a crosstalk reduction element disposed in the back side at a location above the shallow trench isolation.
A method for manufacturing a CMOS image sensor, the method comprising:
- providing a semiconductor substrate having a front side and a back side;
- forming at least two pixels in the front side;
- forming a shallow trench isolation in the front side between the at least two pixels;
- forming a deep trench in the back side at a location above the shallow trench isolation;
- and
- depositing a dielectric layer in the deep trench to form a crosstalk reduction element.
An electronic device comprising a CMOS image sensor, the image sensor comprising:
- a semiconductor substrate having a front side and a back side;
- at least two pixels disposed in the first side;
- a shallow trench isolation disposed in the first side between the at least two pixels;
- and
- a crosstalk reduction element disposed in the second side at a location above the shallow trench isolation.
Dependencies are inferred from the claim text.