Thin film transistor panel having an etch stopper on semiconductor

A method for forming a panel comprising a thin film transistor, the method comprising:

• forming an oxide semiconductor pattern comprising a channel region;
• forming an etch stopper at a position corresponding to the channel region;
• and
• forming a first electrode and a second electrode spaced apart from the first electrode, the channel region configured to connect the first electrode to the second electrode,
• wherein the oxide semiconductor pattern, the first electrode, and the second electrode are formed using a first mask.