Thin film transistor panel having an etch stopper on semiconductor

A panel comprising a thin film transistor, the panel comprising:

• a substrate;
• a first electrode on the substrate;
• a first insulating layer on the first electrode;
• an oxide semiconductor pattern on the first insulating layer;
• an etch stopper on the oxide semiconductor pattern;
• a second electrode and a third electrode on the etch stopper and the oxide semiconductor pattern,
• wherein a pattern of the etch stopper is contained entirely within a perimeter of the oxide semiconductor pattern, and distances between corresponding sidewalls of the etch stopper and the oxide semiconductor pattern are substantially the same.