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US 2015/0318309 A1Published application
Thin film transistor, method for manufacturing the same, and device comprising the same
AssigneeBoe Technology Group Co., Ltd.
InventorsYanzhao LI, Gang WANG, Jingang FANG
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Abstract
A thin film transistor is provided. An active layer (3) of the thin film transistor is made of an amorphous phosphide semiconductor material. Due to high carrier mobility of the phosphide semiconductor material, a thin film transistor with a high carrier mobility can be obtained by employing the amorphous phosphide semiconductor material to prepare the active layer of the thin film transistor. A method for manufacturing such a thin film transistor, and an array substrate and a display panel each comprising such a thin film transistor, are further provided.
Claims19
A thin film transistor comprising:
- a base substrate, and a gate, an active layer, a source and a drain formed on the base substrate, wherein,
- a material for the active layer is an amorphous phosphide semiconductor material.
Dependencies are inferred from the claim text.