Back to results
US 2015/0318289 A1Published application
Memory device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy LIAW
Life of this patent
Estimating the term…
Abstract
A memory device includes a plurality of memory cells At least one of the memory cells includes a plurality of transistors with vertical-gate-all-around configurations and a plurality of active blocks. A portion of at least one of the active blocks serves as a source or a drain of one of the transistors.
Claims20
A memory device comprising:
- a plurality of memory cells, at least one of the memory cells comprising:
- a plurality of transistors with vertical-gate-all-around configurations;
- and
- a plurality of active blocks, a portion of at least one of the active blocks serving as a source or a drain of one of the transistors.
1 more element
A memory device comprising:
- a plurality of memory cells, at least one of the memory cells comprising:
- a plurality of active blocks;
- and
- a plurality of transistors, at least one of the transistors comprising:
- a bottom electrode formed by a portion of one of the active blocks serving as one of a source and a drain of the transistor;
- a top electrode serving as the other of the source and the drain;
- a channel rod disposed between the bottom electrode and the top electrode and connected to the bottom electrode and the top electrode;
- a gate insulator surrounding the channel rod;
- and
- a gate surrounding the channel rod and the gate insulator.
7 more elements
A method for manufacturing a memory device, comprising:
- forming a plurality of memory cells on or above a substrate, wherein forming at least one of the memory cells comprises:
- forming a plurality of active blocks on or above a substrate;
- and
- forming a plurality of transistors with vertical-gate-all-around configurations above the substrate, wherein a portion of one the active blocks serves as a source or a drain of one of the transistors.
1 more element
Dependencies are inferred from the claim text.