Multiple Channel Length Finfets with Same Physical Gate Length

A method of forming a semiconductor structure, comprising:

• forming a first fin and a second fin;
• forming first and second gate electrode structures on the respective first and second fins, wherein the first and second gate electrode structures include respective first and second gate metals and first and second sidewall spacers, and wherein the first and second gate electrode structures have a first physical gate length;
• forming first and second source and drain recesses in the first and second fins on opposite sides of the respective first and second gate electrode structures;
• performing a first in-situ doped epitaxial material growth in the first source and drain recesses in the first fin to form first source and drain regions in the first fin;
• and
• performing a second in-situ doped epitaxial material growth in the second source and drain regions of the second fin to form second source and drain regions in the second fin;
• wherein a first spacing between inner edges of the first source and drain regions in the first fin is different than a second spacing between inner edges of the second source and drain regions in the second fin, the first and second spacing defining a first and second effective channel length for a first finFET device and a second finFET device, respectively, with the first effective channel length of the first finFET being different than the second effective channel length of the second finFET.