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AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Ali Khakifirooz, Eric D. Marshall, Alexander Reznicek, Benjamen N. Taber
Estimating the term…
A semiconductor device fabrication process includes forming a plurality of fins upon a semiconductor substrate and forming a plurality of gate stacks upon the semiconductor substrate orthogonal to the plurality of fins, forming fin portions by recessing the plurality of fins and semiconductor substrate adjacent to the plurality of gate stacks, and forming uniform unmerged epitaxy upon the fin portions. A semiconductor device includes the plurality of fins, the plurality of gate stacks, a first semiconductor substrate recess between a first gate stack pair and a second semiconductor recess between a second gate stack pair, and unmerged epitaxy. The plurality of fins each include fin portions and the unmerged epitaxy including a first epitaxy pair contacting fin portions associated with the first gate stack pair and a second epitaxy pair contacting fin portions associated with the second gate stack pair.
A semiconductor device fabrication process comprising:
A semiconductor device comprising:
A design structure tangibly embodied in a non-transitory machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
Dependencies are inferred from the claim text.