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US 2015/0318278 A1Published application
Circuit and Method for Reducing BVii on Highly Overdriven Devices
AssigneeMicrosemi SoC Corporation
InventorsJohn L. McCollum, Fethi Dhaoui
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Abstract
An integrated circuit is formed on a p-type semiconductor substrate connected to ground potential. A deep n-well is disposed in the p-type substrate. A p-well is disposed in the deep n-well. An n+ drain region and an n+ source region are disposed in the p-well, the n+ source region connected to a common potential. A p-type contact is disposed in the p-well and is connected to ground potential through a resistor.
Claims13
An integrated circuit comprising:
- a p-type semiconductor substrate connected to ground potential;
- a deep n-well disposed in the p-type substrate;
- a p-well disposed in the deep n-well;
- an n+ drain region and an n+ source region disposed in the p-well, the n+ source region connected to a common potential;
- a p-type contact disposed in the p-well and arranged to connect the p-well to the common potential through a resistor.
2 more elements
Dependencies are inferred from the claim text.