Antenna effect discharge circuit and manufacturing method

An integrated circuit device, comprising:

• a device substrate;
• integrated circuitry on the device substrate having a plurality of patterned conductor layers, the plurality of patterned conductor layers including an upper layer and one or more lower layers, the one or more lower layers including a node having operating voltages applied thereto during operation;
• a p-channel field effect transistor and an n-channel field effect transistor on the device substrate, having respective gates, respective channel wells, and respective sources and drains in the respective channel wells;
• a first capacitor having a first terminal in, or connected to, a region in the device substrate, and a second terminal connected to the gate of the p-channel field effect transistor;
• a second capacitor having a first terminal in, or connected to, a region in the device substrate, and a second terminal connected to the gate of the n-channel field effect transistor;
• one of the source and drain of the each of the p-channel field effect transistor and n-channel field effect transistor being connected to said node, the other of the source and drain of each of the p-channel field effect transistor and n-channel field effect transistor being connected to the device substrate;
• a voltage supply circuit configured to provide a first voltage sufficient to bias the p-channel field effect transistor in an off condition during operation at said operating voltages, and to provide a second voltage sufficient to bias the n-channel field effect transistor in an off condition during operation at said operating voltages;
• a first patterned conductor in the upper layer connecting the gate and the channel well of the p-channel field effect transistor to the voltage supply circuit;
• and
• a second patterned conductor in the upper layer connecting the gate and the channel well of the n-channel field effect transistor to the voltage supply circuit.

A method for manufacturing an integrated circuit device, comprising:

• forming integrated circuitry on a substrate, the circuitry having a node to be protected from plasma discharge;
• forming an antenna effect discharge circuit on the substrate, having a terminal connected to the node, and a gate coupled via a capacitor to the substrate;
• providing a voltage supply circuit on the substrate to bias the gate during operation to turn off the antenna effect discharge circuit;
• and
• connecting the gate to the voltage supply circuit using an upper patterned conductor layer on the device.