3d stacked-chip package
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Wen-Ching Tsai, Ming-Fa Chen
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Abstract
Disclosed herein is a package comprising a first die, a second die, and an insulating film extending along sidewalls of the first die or the second die. The first die includes a first redistribution layer (RDL) disposed on a first semiconductor substrate and a conductive element in the first RDL. The second die includes a second RDL disposed on a second semiconductor substrate, wherein the first RDL is bonded to the second RDL. The package further includes a via extending from the conductive elements through the first semiconductor substrate and a spacer interposed between the first semiconductor substrate and the via. The first spacer extends from the conductive element through the first semiconductor substrate.
Claims20
A package comprising:
- a first die comprising:
- a first redistribution layer (RDL) disposed on a first semiconductor substrate;
- and
- a first conductive element in the first RDL;
- a second die comprising a second RDL disposed on a second semiconductor substrate, wherein the first RDL is bonded to the second RDL;
- an insulating film extending along sidewalls of the first die or the second die;
- a first via extending from the first conductive elements through the first semiconductor substrate;
- and
- a first spacer interposed between the first semiconductor substrate and the first via, wherein the first spacer extends from the first conductive element through the first semiconductor substrate.
A package, comprising:
- a first die having a first redistribution layer (RDL) disposed on a first substrate;
- a second die having a second RDL disposed on a second substrate, wherein the second RDL is bonded to the first RDL;
- a first insulating film disposed over the first die and around the second die, wherein the first insulating film comprises silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof;
- first vias extending through the second substrate, wherein each of the first vias contacts at least one conductive element in the first RDL or the second RDL;
- and
- first spacers electrically insulating the first vias from the second substrate.
A method, comprising:
- bonding a first redistribution layer (RDL) disposed on a first semiconductor substrate to a second RDL disposed on a second semiconductor substrate using an oxide-to-oxide bond, wherein the first RDL comprises a first conductive element;
- forming an insulating film around a die, wherein the die comprises the first RDL or the second RDL;
- after forming the insulating film, patterning a first opening in the first semiconductor substrate and the first RDL, wherein the first opening extends through the first semiconductor substrate and exposes the first conductive element;
- depositing an isolation layer on sidewalls and a bottom surface of the first opening;
- removing lateral portions of the isolation layer while leaving portions of the isolation layer on sidewalls of the first semiconductor substrate;
- and
- filling a remaining portion of the first opening with a conductive material.
Dependencies are inferred from the claim text.