Semiconductor device connected by anisotropic conductive film

The semiconductor device as claimed in 3, wherein the second epoxy resin is present in an amount of about 60 to about 90 parts by weight based on 100 parts by weight of the first and second epoxy resins.

A semiconductor device connected by an anisotropic conductive film, wherein:

• the anisotropic conductive film includes a composition including a first epoxy resin having an exothermic peak temperature of about 80° C. to about 110° C. and a second epoxy resin having an exothermic peak temperature of about 120° C. to about 200° C., as measured by differential scanning calorimetry (DSC),
• the first epoxy resin and the second epoxy resin are present in combined amount of about 30 wt % to about 50 wt % based on a total weight of the composition in terms of solid content, and
• the second epoxy resin is present in an amount of about 60 to about 90 parts by weight based on 100 parts by weight of the first and second epoxy resins.