Structures, devices and methods for memory devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFENG-MING CHANG, LIEN-JUNG HUNG, HUAI-YING HUANG, PING-WEI WANG
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Abstract
Structures, devices and methods are provided for fabricating memory devices. A structure includes: a first conductive line disposed in a first conductive layer; a first landing pad disposed in the first conductive layer and associated with a second conductive line disposed in a second conductive layer; and a second landing pad disposed in the first conductive layer and associated with a third conductive line disposed in a third conductive layer. The second conductive layer and the third conductive layer are different from the first conductive layer.
Claims20
A structure for fabricating a memory device, the structure comprising:
- a first conductive line disposed in a first conductive layer;
- a first landing pad disposed in the first conductive layer and associated with a second conductive line disposed in a second conductive layer;
- and
- a second landing pad disposed in the first conductive layer and associated with a third conductive line disposed in a third conductive layer;
- wherein the second conductive layer and the third conductive layer are different from the first conductive layer.
A static random access memory (SRAM) device comprising:
- a first word line disposed in a first conductive layer;
- a second word line disposed in a second conductive layer and associated with a first landing pad disposed in the first conductive layer;
- and
- a third word line disposed in a third conductive layer and associated with a second landing pad disposed in the first conductive layer;
- wherein the second conductive layer and the third conductive layer are different from the first conductive layer.
A method for fabricating a memory device, the method comprising:
- forming a first conductive line, a first landing pad and a second landing pad in a first conductive layer;
- forming one or more first inter-layer connection structures to connect the first landing pad to a second conductive line in a second conductive layer;
- and
- forming one or more second inter-layer connection structures to connect the second landing pad to a third conductive line in a third conductive layer;
- wherein the second conductive layer and the third conductive layer are different from the first conductive layer.
Dependencies are inferred from the claim text.