Mixed n/p type non-planar semiconductor structure with multiple epitaxial heads and method of making same
AssigneeGlobalfoundries Inc.
InventorsXusheng WU, Xiang HU, Changyong XIAO, Wanxun HE
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Abstract
A non-planar semiconductor structure includes mixed n-and-p type raised semiconductor structures, e.g., fins, having epitaxial structures grown on top surfaces thereof, for example, epitaxial silicon and silicon germanium, naturally growing into a diamond shape. The surface area of the epitaxial structures is increased by removing portion(s) thereof, masking each type as the other type is grown and then subsequently modified by the removal. The removal may create multi-head (e.g., dual-head) epitaxial structures, together with the neck of the respective raised structure resembling a Y-shape.
Claims16
A method, comprising:
- providing a semiconductor structure, the structure comprising a semiconductor substrate, at least one first raised semiconductor structure of a first type coupled to the substrate, and at least one second raised semiconductor structure of a second type coupled to the substrate;
- growing at least one first epitaxial structure on a first top surface of one or more of the at least one first raised structure, wherein the at least one first epitaxial structure comprises at least one first epitaxial material;
- growing at least one second epitaxial structure on a second top surface of one or more of the at least one second raised structure, wherein the at least one second epitaxial structure comprises at least one second epitaxial material;
- increasing a first surface area of the at least one first epitaxial structure without growing additional at least one first epitaxial material;
- and
- increasing a second surface area of the at least one second epitaxial structure without growing additional at least one second epitaxial material.
A semiconductor structure, comprising:
- a semiconductor substrate;
- at least one first raised semiconductor structure coupled to the substrate, wherein the first raised structure is one of N type and P type;
- at least one second raised semiconductor structure coupled to the substrate, wherein the second raised structure is the other of N type and P type;
- at least one first epitaxial structure of a first epitaxial material coupled to the at least one first raised semiconductor structure, wherein the at least one first epitaxial structure comprises at least two first epitaxial head structures;
- and
- at least one second epitaxial structure of a second epitaxial material coupled to the at least one second raised semiconductor structure, wherein the at least one second epitaxial structure comprises at least two second epitaxial head structures.
Dependencies are inferred from the claim text.