Formation of germanium-containing channel region by thermal condensation utilizing an oxygen permeable material

Abstract

A structure including a first semiconductor material portion and a second semiconductor material portion is provided. An oxygen impermeable hard mask is then formed directly on a surface of the first semiconductor material portion. Next, a silicon germanium layer is epitaxially formed on the second semiconductor material portion, but not the first semiconductor material portion. An oxygen permeable hard mask is then formed over the first and second semiconductor material portions. A thermal condensation process is then performed which converts the second semiconductor material portion into a germanium-containing semiconductor material portion. The oxygen permeable hard mask and the oxygen impermeable hard mask are then removed. A functional gate structure can be formed atop the remaining first semiconductor material portion and the thus formed germanium-containing semiconductor material portion.

Dependencies are inferred from the claim text.