Methods for removing selected fins that are formed for finfet semiconductor devices
AssigneeGlobalfoundries Inc.
InventorsWilliam J. Taylor, Jr., Ruilong Xie
Life of this patent
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Abstract
One illustrative method disclosed herein includes, among other things, forming a plurality of trenches in a semiconductor substrate to thereby define a plurality of fins in the substrate, forming a layer of insulating material in the trenches, performing an etching process sequence to remove at least a portion of one of the plurality of fins and thereby define a fin cavity, wherein the etching process sequence includes performing a first anisotropic etching process and, after performing the first anisotropic etching process, performing a second isotropic etching process. In this embodiment, the method concludes with the step of forming additional insulating material in the fin cavity.
Claims20
A method, comprising:
- forming a plurality of trenches in a semiconductor substrate to thereby define a plurality of fins in said substrate;
- forming a layer of insulating material in said plurality of trenches;
- performing an etching process sequence to remove at least a portion of one of said plurality of fins and thereby define a fin cavity, wherein said etching process sequence comprises:
- performing a first anisotropic etching process;
- and
- after performing said first anisotropic etching process, performing a second isotropic etching process;
- and
- forming additional insulating material in said fin cavity.
A method, comprising:
- forming a plurality of trenches in a semiconductor substrate to thereby define a plurality of fins in said substrate, said plurality of trenches having a first depth;
- forming a layer of insulating material in said plurality of trenches;
- performing a first anisotropic etching process to remove at least a portion of one of said plurality of fins and thereby define an initial fin cavity having a second depth that is greater than said first depth and a bottom width;
- after performing said first anisotropic etching process, performing a second isotropic etching process to define a final fin cavity, wherein said final fin cavity has a third depth that is greater than said second depth and a second width at a bottom of said final fin cavity that is greater than said bottom width;
- and
- forming additional insulating material in said final fin cavity.
A method, comprising:
- forming a plurality of fin-formation trenches in a semiconductor substrate to thereby define a plurality of fins in said substrate;
- performing a fin-cut etching process to form a plurality of fin-cut trenches;
- forming a layer of insulating material in said fin-formation trenches and in said fin-cut trenches;
- performing a fin removal etching process sequence to remove at least a portion of one of said plurality of fins and thereby define a fin cavity, wherein said final removal etching process sequence comprises:
- performing a first anisotropic etching process;
- and
- after performing said first anisotropic etching process, performing a second isotropic etching process;
- and
- forming additional insulating material in said fin cavity.
An integrated circuit device, comprising:
- a plurality of fin-formation trenches defined in a semiconductor substrate that define a plurality of fins having a long axis, said fin-formation trenches having a first width at a bottom of said fin-formation trenches;
- a fin removal trench formed in said substrate between two of said plurality of fins, said fin removal trench having a long axis that is substantially parallel to said long axis of said plurality of fins, wherein a bottom of said fin removal trench has a maximum width that is greater than said first width;
- and
- an insulating material positioned in said fin-formation trenches and in said fin removal trench.
An integrated circuit device, comprising:
- a plurality of fin-formation trenches defined in a semiconductor substrate that define a plurality of fins having a long axis, said fin-formation trenches having a first depth;
- a fin removal trench formed in said substrate between two of said plurality of fins, said fin removal trench having a long axis that is substantially parallel to said long axis of said plurality of fins, wherein a bottom of said fin removal trench has a stepped configuration when viewed in a cross-section taken along said long axis of said fin removal trench with opposing ends of said fin removal trench having a depth that is equal to said first depth and a region between said opposing ends having a second depth at a mid-point of said region that is greater than said first depth;
- and
- an insulating material positioned in said fin-formation trenches and in said fin removal trench.
Dependencies are inferred from the claim text.